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IRLW630ATM
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IRLW630ATM

Part Number: IRLW630ATM
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 200V 9A I2PAK
Datasheets: 1.IRLW630ATM.pdf
Stock Condition N/A
Ship From Hong Kong
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of IRLW630ATM

Part Number IRLW630ATM Manufacturer AMI Semiconductor / ON Semiconductor
Series -FET Type N-Channel
Packaging Tape & Reel (TR)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 200V 9A I2PAK
FET Feature -Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAQuantity Available 5647 pcs
Vgs(th) (Max) @ Id 2V @ 250µADetailed Description N-Channel 200V 9A (Tc) 3.1W (Ta), 69W (Tc) Through Hole I2PAK (TO-262)
Operating Temperature -55°C ~ 150°C (TJ)Rds On (Max) @ Id, Vgs 400 mOhm @ 4.5A, 5V
Power Dissipation (Max) 3.1W (Ta), 69W (Tc)Supplier Device Package I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs 27nC @ 5VDrain to Source Voltage (Vdss) 200V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 755pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 5V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
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