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FDI3652
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FDI3652

Part Number: FDI3652
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 100V 61A TO-262AA
Datasheets: 1.FDI3652.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FDI3652

Part Number FDI3652 Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 100V 61A TO-262AA
FET Feature -Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAQuantity Available 4576 pcs
Vgs(th) (Max) @ Id 4V @ 250µADetailed Description N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
Operating Temperature -55°C ~ 175°C (TJ)Rds On (Max) @ Id, Vgs 16 mOhm @ 61A, 10V
Power Dissipation (Max) 150W (Tc)Supplier Device Package I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10VDrain to Source Voltage (Vdss) 100V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 61A (Tc)
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