LAPIS Semiconductor LAPIS Semiconductor
EMD30T2R
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EMD30T2R

Part Number: EMD30T2R
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS NPN/PNP PREBIAS 0.15W EMT6
Datasheets: 1.EMD30T2R.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of EMD30T2R

Part Number EMD30T2R Manufacturer LAPIS Semiconductor
Series -Packaging Tape & Reel (TR)
Description TRANS NPN/PNP PREBIAS 0.15W EMT6Other Names EMD30T2R-ND EMD30T2RTR
Power - Max 150mWMounting Type Surface Mount
Package / Case SOT-563, SOT-666Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Base Part Number *MD30Quantity Available 1046408 pcs
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 30V 100mA, 200mA 250MHz, 260MHz 150mW Surface Mount EMT6Resistor - Base (R1) 10 kOhms, 1 kOhms
Frequency - Transition 250MHz, 260MHzSupplier Device Package EMT6
Resistor - Emitter Base (R2) 10 kOhmsVce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
Current - Collector (Ic) (Max) 100mA, 200mALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Cutoff (Max) 500nAMoisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 140 @ 100mA, 2VVoltage - Collector Emitter Breakdown (Max) 50V, 30V
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